product overview single-channel silicon esd protection devices te connectivitys silicon esd devices help to protect electronic circuits against damage from electrostatic discharge (esd), surge and cable discharge events.
te.com single-channel silicon esd protection devices te connectivity applications ? consumer, mobile and portable electronics ? tablet pc and external storage with high speed interfaces ? ultra-high speed data lines ? usb 3.0/2.0, hdmi 1.3/1.4, displayport interface, thunderbo lt interface (l ight peak), v-by-one hs, and lvds interface ? a pp lications requiring high esd performance in sma ll packages benefits ? industry-leading lowest capacitance; provides lowest insertion loss for high speed data signals ? provides esd protection up to 20kv contact and air discharge per iec61000-4-2 ? small size esd protection diodes for high speed data signals (0402- and 0201- size devices) ? helps protect electronic circuits against damage from electrostatic discharge (esd), lightning and cable discharge e vents ? assist equipment to pass iec61000-4-2, level 4 testing key features ? low capacitance C at 0.10pf (typ. bi-di 100ff), at 0.20pf (typ. uni-di 200ff) ? low leakage current C 50na @ 5v (typ) ? low clamping voltage C +10.0/-10.0v (typ. bi-di), +9.20/-0.80v (typ. uni-di) @ (tp=8x20s, ipp=2a) ? esd C 20kv contact/air discharge per iec61000-4-2 ? surge C 2a (max) @ (tp=8x20 s) per iec61000-4-5 ? small size and low pro?le xdfn packages ? rohs complaint, pb and halogen free (refers to: br 900ppm, cl 900ppm, br+cl 1500ppm) the silicon esd (sesd) devices help provide protection and improve reliability of applications including but not limited to consumer, portable and mobile electronics. the 0402- and 0201- sized devices have industry leading ultra-low capacitance of 0.10pf for bi-directional devices, and 0.20pf for uni-directional devices with low insertion loss which help provide protection for ultra-high-speed data signals. the single-channel sesd devices provide robust esd protection with industry-leading 20kv contact and air discharge rating per iec61000-4-2 standard. the ultra-lo w capacitance enables signal integrity for todays highest-speed interfaces including usb 3.0/2.0, hdmi, esata, displayport, and thunderbolt. te offers the single-channel devices in uni-directional and bi-directional con?gurations. bi-directional devices offer the lowest capacitance and insertion loss, allow placement on the pcb without orientation constraint and do not clip signals that swing below ground. uni-directional devices offer a low negative breakover voltage and help provide protection for high-speed digital interfaces. the 0201-sized xdfn small footprint measuring a mere 0.6mm x 0.3mm x 0.31mm C offers designers placement ?exibility in space-constrained applications.
te.com single-channel silicon esd protection devices te connectivity devices iec 61000-4-2, level 4 (esd withstand) temperature peak current (tp=8x20s) contact (kv) air (kv) operating (c) storage (c) ipp (a) sesd0201x1bn-0010-098 (1) 20 20 -55 to +125 -55 to +150 sesd0402x1bn-0010-098 (1) sesd0201x1un-0020-090 (2) SESD0402X1UN-0020-090 (2) caution: stress exceeding device maximum ratings may damage the device. prolong exposure to stresses above the recommended operating conditions may affect device reliability. device electrical characteristics device iv characteristics devices input capacitance (3) breakdown voltage (typ) reverse leakage current (typ) clamping voltage (typ) typical (pf) maximun (pf) v br @ i t = 1ma (v) i l @ v rwm = 5.0v (na) v cl @ ipp = 2.0a (v) sesd0201x1bn-0010-098 (1) 0.10 0.12 +9.80 / -9.80 50.0 +10.0 / -10.0 sesd0402x1bn-0010-098 (1) sesd0201x1un-0020-090 (2) 0.20 0.22 +9.00 / -0.80 +9.2 / -0.8 SESD0402X1UN-0020-090 (2) (1) bi-directional (2) uni-directional (3) @ vr = 0v, f = 3ghz current (ma) voltage (v) current (ma) voltage (v) sesd bi-directional iv sesd uni-directional iv 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 -2 -1 0 1 2 3 4 5 6 7 8 9 10 current (ma) voltage (v) current (ma) voltage (v) sesd bi-directional iv sesd uni-directional iv 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 -2 -1 0 1 2 3 4 5 6 7 8 9 10 device maximum ratings device electrical characteristics @ t=25c 2.0
te.com single-channel silicon esd protection devices te connectivity functional diagram: bi-directional and uni-directional operation insertion loss single-channel bi-directional device single-channel uni-directional device esd -v strike path esd +v strike path esd -v strike path esd +v strike path gnd gnd connect or application circuitry connect or application circuitry es d - v s tri ke t h s single-channel bi-directional device single-channel uni-directional device esd -v strike path esd +v strike path esd -v strike path esd +v strike path gnd gnd connect or application circuitry connect or application circuitry es d - v s tri ke t h s ? helps protect against damage from v esd strikes to 20kv contact & air discharge. ? if the signal voltage goes below -9.8v or above +9.8v the esd device turns on and shunts to gnd. ? helps protect against damage from v esd strikes to 20kv contact & air discharge. ? if the signal voltage goes below -0.8v or above 9v the esd device turns on and shunts to gnd. [se sd0402x1 bn / sesd0201x1bn]-0010-098 (bi-directional operation) frequency (ghz) s21 insertion loss (db) 2 0 -2 -4 -6 -8 -10 2 0 -2 -4 -6 -8 -10 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 [ses d0 402x1un / sesd0 201x1un]-0020-090 (uni-directional operation) frequency (ghz) s21 insertion loss (db) [se sd 0402x1bn / sesd0201x1 bn]-0010-098 (bi-directional operation) frequency (ghz) s21 insertion loss (db) 2 0 -2 -4 -6 -8 -10 2 0 -2 -4 -6 -8 -10 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 [sesd0402x1un / sesd02 01x 1un]-0020-090 (uni-directional operation) frequency (ghz) s21 insertion loss (db) application bit rate (gbps) @frequency (ghz) insertion loss (db) hdmi 1.4 (1080p) 2.25 1.13 -0.12 displayport 2.70 1.35 -0.16 hdmi 1.4 (max spec)* 3.40 1.70 -0.19 usb3.0 5.00 2.50 -0.23 es ata 6.00 3.00 -0.27 thunderbolt 10.00 5.00 -0.30 application bit rate (gbps) @frequency (ghz) insertion loss (db) hdmi 1.4 (1080p) 2.25 1.13 -0.15 displayport 2.70 1.35 -0.20 hdmi 1.4 (max spec)* 3.40 1.70 -0.23 usb3.0 5.00 2.50 -0.29 es ata 6.00 3.00 -0.35 thunderbolt 10. 00 5.00 -0.50 * devices are hdmi 4k / quadhd resolutions (4096 x 2160) ready * devices are hdmi 4k / quadhd resolutions (4096 x 2160) ready
te.com single-channel silicon esd protection devices te connectivity e ye d iagrams usb3.0 eye diagrams 5.0gb/s, 1000mv differential, cpo compliant test pattern displayport eye diagrams 2.7gb/s, 800mv differential, prbs7 compliant test pattern, ssc enabled hdmi eye diagrams 3.4gb/s, 990mv differential, tmds data without sesd device without sesd device without sesd device with sesd device with sesd device with sesd device
te.com single-channel silicon esd protection devices te connectivity d evice d imension dim sesd0402 xdfn sesd0201 xdfn millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.330 0.380 0.430 0.0130 0.0150 0.0170 0.30 0.31 0.32 0.0115 0.0122 0.0125 a1 0 C 0.050 0 C 0.0020 0 C 0.05 0 C 0.0020 a3 0.130 ref. 0.005 ref. 0.102 ref. 0.0040 ref. d 0.550 0.600 0.650 0.0220 0.0240 0.0260 0.285 0.320 0.355 0.0112 0.0120 0.0139 e 0.950 1.000 1.050 0.0370 0.0390 0.0410 0.585 0.620 0.655 0.0230 0.0244 0.0237 k 0.350 0.400 0.450 0.0140 0.0160 0.0180 0.130 0.155 0.180 0.0052 0.0061 0.0071 b 0.450 0.500 0.550 0.0180 0.0200 0.0220 0.235 0.260 0.285 0.0083 0.0102 0.0112 l 0.200 0.250 0.300 0.0080 0.0100 0.0120 0.175 0.200 0.225 0.0069 0.0079 0.0088 e 0.650 bsc 0.026 bsc 0.355 bsc 0.014 bsc e c k a a1 l d a3 end view ? 1 end view ? 2 side view ? 1t op vie wb ot tom view side view ? 2 pin 1 id cathode band b 2 1
te.com single-channel silicon esd protection devices te connectivity r ecommended s older p ad l ayout b a a f b f d d b a a f b f d d single-channel sesd 0402 xdfn pad layout single-channel sesd 0201 xdfn pad layout sesd landing pad layout 0402 package symbol millimeters inches a 0.60 0.024 b 1.00 0.039 d 0.35 0.014 f 0.30 0.012 sesd landing pad layout 0201 package symbol millimeters inches a 0.32 0.013 b 0.62 0.024 d 0.24 0.009 f 0.14 0.006 material information rohs compliant elv compliant pb-free halogen free* directive 2000/53/ec compliant directive 2002/95/ec compliant pb hf * halogen free refers to: br 900ppm, cl900ppm, br+cl1500ppm. sesd devices meet msl-1 requirements dfn case epoxy meets ul 94 v-0
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mouser electronics authorized distributor click to view pricing, inventory, delivery & lifecycle information: te connectivity: ? sesd0201x1bn-0010-098? sesd0201x1un-0020-090? sesd0402x1bn-0010-098? SESD0402X1UN-0020-090
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